Back to Search
Start Over
A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg=Vd
- Source :
- Microelectronics Reliability; 2001, Vol. 41 Issue: 11 p1909-1913, 5p
- Publication Year :
- 2001
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 41
- Issue :
- 11
- Database :
- Supplemental Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Periodical
- Accession number :
- ejs2662976
- Full Text :
- https://doi.org/10.1016/S0026-2714(01)00118-4