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Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering

Authors :
Qian, F.
Temmel, G.
Schnupp, R.
Ryssel, H.
Source :
Microelectronics Reliability; 1999, Vol. 39 Issue: 2 p317-323, 7p
Publication Year :
1999

Details

Language :
English
ISSN :
00262714
Volume :
39
Issue :
2
Database :
Supplemental Index
Journal :
Microelectronics Reliability
Publication Type :
Periodical
Accession number :
ejs2662493
Full Text :
https://doi.org/10.1016/S0026-2714(98)00229-7