Characterization of oxide etching and wafer cleaning using vapor phase anhydrous hydrofluoric acid and ozone

MLA

Bauer, A. J., et al. “Characterization of Oxide Etching and Wafer Cleaning Using Vapor Phase Anhydrous Hydrofluoric Acid and Ozone.” Microelectronics Reliability, vol. 39, no. 2, Jan. 1999, pp. 311–16. EBSCOhost, https://doi.org/10.1016/S0026-2714(98)00226-1.

APA

Bauer, A. J., Froeschle, B., Beichele, M., & Ryssel, H. (1999). Characterization of oxide etching and wafer cleaning using vapor phase anhydrous hydrofluoric acid and ozone. Microelectronics Reliability, 39(2), 311–316. https://doi.org/10.1016/S0026-2714(98)00226-1

Chicago

Bauer, A.J., B. Froeschle, M. Beichele, and H. Ryssel. 1999. “Characterization of Oxide Etching and Wafer Cleaning Using Vapor Phase Anhydrous Hydrofluoric Acid and Ozone.” Microelectronics Reliability 39 (2): 311–16. doi:10.1016/S0026-2714(98)00226-1.