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A novel method for extraction of VDMOSFET model parameters using neural networks
- Source :
- Microelectronics Reliability; 1998, Vol. 38 Issue: 3 p331-336, 6p
- Publication Year :
- 1998
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 38
- Issue :
- 3
- Database :
- Supplemental Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Periodical
- Accession number :
- ejs2662272
- Full Text :
- https://doi.org/10.1016/S0026-2714(97)00177-7