Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

Details

Language :

English

ISSN :

00220248

Volume :

234

Issue :

1

Database :

Supplemental Index

Journal :

Journal of Crystal Growth

Publication Type :

Periodical

Accession number :

ejs2580526

Full Text :

https://doi.org/10.1016/S0022-0248(01)01664-5