High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer

Details

Language :

English

ISSN :

00220248

Volume :

233

Issue :

3

Database :

Supplemental Index

Journal :

Journal of Crystal Growth

Publication Type :

Periodical

Accession number :

ejs2580469

Full Text :

https://doi.org/10.1016/S0022-0248(01)01592-5