Back to Search
Start Over
Characterization of InGaP/GaAs heterointerfaces grown by metal organic vapour phase epitaxy
- Source :
- Journal of Crystal Growth; 2000, Vol. 221 Issue: 1 p509-514, 6p
- Publication Year :
- 2000
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 221
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Periodical
- Accession number :
- ejs2579355
- Full Text :
- https://doi.org/10.1016/S0022-0248(00)00753-3