Electrically stable p-type doping of ZnSe grown by molecular beam epitaxy with different nitrogen activators

Details

Language :

English

ISSN :

00220248

Volume :

214

Issue :

1

Database :

Supplemental Index

Journal :

Journal of Crystal Growth

Publication Type :

Periodical

Accession number :

ejs2578768

Full Text :

https://doi.org/10.1016/S0022-0248(00)00139-1