Accuracy of differential method to distinguish crystal originated particles from light point defects in Czochralski-grown silicon wafers

Details

Language :

English

ISSN :

00220248

Volume :

210

Issue :

1

Database :

Supplemental Index

Journal :

Journal of Crystal Growth

Publication Type :

Periodical

Accession number :

ejs2578115

Full Text :

https://doi.org/10.1016/S0022-0248(99)00641-7