Behavior of impurity atoms during crystal growth from melted silicon: carbon atoms

Details

Language :

English

ISSN :

00220248

Volume :

194

Issue :

2

Database :

Supplemental Index

Journal :

Journal of Crystal Growth

Publication Type :

Periodical

Accession number :

ejs2576504

Full Text :

https://doi.org/10.1016/S0022-0248(98)00728-3