Molecular beam epitaxy growth and characterization of In~xGa~1~-~xAs (0.57 = x = 1) on GaAs using InAlAs graded buffer

Details

Language :

English

ISSN :

00220248

Volume :

175

Issue :

2

Database :

Supplemental Index

Journal :

Journal of Crystal Growth

Publication Type :

Periodical

Accession number :

ejs2575034

Full Text :

https://doi.org/10.1016/S0022-0248(96)00892-5