Real-time optical monitoring of Ga~xIn~1~-~xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions

Details

Language :

English

ISSN :

00220248

Volume :

164

Issue :

1

Database :

Supplemental Index

Journal :

Journal of Crystal Growth

Publication Type :

Periodical

Accession number :

ejs2573801

Full Text :

https://doi.org/10.1016/0022-0248(95)01018-1