Photoluminescence of CdZnSeZnSequantum well structures fabricated by reactive ion etching

Wire and dot patterns of CdZnSeZnSequantum wells have been fabricated by a methane(CH4)hydrogen(H2)reactive ion etching technique. The structures exhibit photoluminescence emission down to the smallest widths of 40 and 60 nm, respectively. The wider wires and dots of about 200–1000 nm show even an increase of the normalized photoluminescence intensity for the emission line in CdZnSeZnSeas compared to the unetched quantum well structure. For the smallest structures a decrease of the red shift is observed.