Extended X-ray absorption fine structure study of heavily Cl doped ZnSe

The structural characteristics of heavily Cl doped ZnSe grown by molecular beam epitaxy were investigated by means of extended X-ray absorption fine structure (EXAFS) measurements. Two kinds of bond length between Cl and the nearest Zn atoms were observed; one is 0.25 nm and the other is 0.28 nm. The former is nearly equal to the bond length of SeZn (0.245 nm) in ZnSe indicating that four-coordinated Cl incorporated into the Se lattice site. The latter seems to indicate a defect structure, and a Clzinc vacancy complex is proposed as the defect model.