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Incorporation kinetics of rare earth impurities in Si during molecular beam epitaxy

Authors :
Miyashita, K.
Houghton, D. C.
Shiraki, Y.
Fukatsu, S.
Source :
Journal of Crystal Growth; 1995, Vol. 157 Issue: 1 p333-337, 5p
Publication Year :
1995

Details

Language :
English
ISSN :
00220248
Volume :
157
Issue :
1
Database :
Supplemental Index
Journal :
Journal of Crystal Growth
Publication Type :
Periodical
Accession number :
ejs2573136
Full Text :
https://doi.org/10.1016/0022-0248(95)00415-7