Study of the NiTi/SiO2interface: analysis of the electronic distributions

We present a study of the interface between a NiTi film deposited by magnetron d.c. sputtering and a SiO2film obtained by thermal oxidation. Electron‐induced X‐ray emission spectroscopy (EXES) is used to characterize the physicochemical environment around the Si atoms at the NiTi/SiO2interface, and to obtain information about the interfacial reactivity. From analysis of the Si 3p valence states, the composition and the thickness of the interfacial zone before and after annealing are deduced. The composition of the passivation layer, located at the surface of the metallic film, is determined by EXES and X‐ray Photoelectron Spectroscopy. Copyright © 2002 John Wiley & Sons, Ltd.