4kV Silicon Carbide MOSFETs

Authors :: Stum, Zachary
Bolotnikov, A.V.
Losee, Peter A.
Matocha, Kevin
Arthur, Stephen
Nasadoski, Jeff
Rao, R. Ramakrishna
Saadeh, O.S.
Stevanovic, Ljubisa
Myers-Ward, Rachael L.
Eddy Jr., Charles R.
Gaskill, D. Kurt
Source :: Materials Science Forum; March 2011, Vol. 679 Issue: 1 p637-640, 4p
Publication Year :: 2011
Abstract: Doubly-implanted SiC vertical MOSFETs were fabricated displaying a blocking voltage of 4.2kV and a specific on-resistance of 23 mΩ-cm2, on a 4.5mm x 2.25mm device. Design variations on smaller (1.1mm x 1.1mm) devices showed on-resistance as low as 17 mΩ-cm2 with a blocking voltage of 3.3kV. Analysis is presented of the on-resistance and temperature dependence (up to 175ºC), as well as switching performance. Switching tests taken at 1000V and 6A showed turn-on and turn-off transients of approximately 20-40ns.