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Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas

Authors :
Myers-Ward, Rachael L.
Nyakiti, Luke O.
Hite, Jennifer K.
Glembocki, Orest J.
Bezares, Francisco J.
Caldwell, Joshua D.
Imhoff, Eugene A.
Hobart, Karl D.
Culbertson, James C.
Picard, Yoosuf N.
Wheeler, Virginia D.
Eddy Jr., Charles R.
Gaskill, D. Kurt
Source :
Materials Science Forum; March 2011, Vol. 679 Issue: 1 p119-122, 4p
Publication Year :
2011

Abstract

Homo- and heteroepitaxial 3C-SiC layers were grown on 4H-SiC step-free mesas. The yields of smooth, defect-free mesas were ~ 17% for both intentionally and unintentionally doped films, while those with screw dislocations and multiple stepped surfaces were ~ 22%. The electronic and structural properties of the mesas were found on a micrometer-sized length scale using µ-PL and µ-Raman, respectively. 3C-SiC mesas were found to have complete 3C-SiC coverage with some of the mesas having electronic defects, while other mesas were found to be defect-free.

Details

Language :
English
ISSN :
02555476 and 16629752
Volume :
679
Issue :
1
Database :
Supplemental Index
Journal :
Materials Science Forum
Publication Type :
Periodical
Accession number :
ejs23551173
Full Text :
https://doi.org/10.4028/www.scientific.net/MSF.679-680.119