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Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas
- Source :
- Materials Science Forum; March 2011, Vol. 679 Issue: 1 p119-122, 4p
- Publication Year :
- 2011
-
Abstract
- Homo- and heteroepitaxial 3C-SiC layers were grown on 4H-SiC step-free mesas. The yields of smooth, defect-free mesas were ~ 17% for both intentionally and unintentionally doped films, while those with screw dislocations and multiple stepped surfaces were ~ 22%. The electronic and structural properties of the mesas were found on a micrometer-sized length scale using µ-PL and µ-Raman, respectively. 3C-SiC mesas were found to have complete 3C-SiC coverage with some of the mesas having electronic defects, while other mesas were found to be defect-free.
Details
- Language :
- English
- ISSN :
- 02555476 and 16629752
- Volume :
- 679
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Materials Science Forum
- Publication Type :
- Periodical
- Accession number :
- ejs23551173
- Full Text :
- https://doi.org/10.4028/www.scientific.net/MSF.679-680.119