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Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
- Source :
- Materials Science Forum; April 2010, Vol. 645 Issue: 1 p633-636, 4p
- Publication Year :
- 2010
-
Abstract
- Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit high carrier mobilities, in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. We will report on the impact that these transfer processes has upon the electrical properties of the transferred EG films.
Details
- Language :
- English
- ISSN :
- 02555476 and 16629752
- Volume :
- 645
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Materials Science Forum
- Publication Type :
- Periodical
- Accession number :
- ejs22666291
- Full Text :
- https://doi.org/10.4028/www.scientific.net/MSF.645-648.633