Error analysis of the semi-discrete local discontinuous Galerkin method for semiconductor device simulation models

Abstract: In this paper we continue our effort in Liu-Shu (2004) and Liu-Shu (2007) for developing local discontinuous Galerkin (LDG) finite element methods to discretize moment models in semiconductor device simulations. We consider drift-diffusion (DD) and high-field (HF) models of one-dimensional devices, which involve not only first derivative convection terms but also second derivative diffusion terms, as well as a coupled Poisson potential equation. Error estimates are obtained for both models with smooth solutions. The main technical difficulties in the analysis include the treatment of the inter-element jump terms which arise from the discontinuous nature of the numerical method, the nonlinearity, and the coupling of the models. A simulation is also performed to validate the analysis.