Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

MLA

Stahlbush, Robert E., et al. “Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth.” Materials Science Forum, vol. 600, no. 1, Sept. 2008, pp. 317–20. EBSCOhost, https://doi.org/10.4028/www.scientific.net/MSF.600-603.317.

APA

Stahlbush, R. E., VanMil, B. L., Liu, K. X., Lew, K. K., Myers Ward, R. L., Gaskill, D. K., Eddy Jr., C. R., Zhang, X., & Skowronski, M. (2008). Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth. Materials Science Forum, 600(1), 317–320. https://doi.org/10.4028/www.scientific.net/MSF.600-603.317

Chicago

Stahlbush, Robert E., Brenda L. VanMil, Kendrick X. Liu, Kok Keong Lew, Rachael L. Myers Ward, D. Kurt Gaskill, Charles R. Eddy Jr., X. Zhang, and Marek Skowronski. 2008. “Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth.” Materials Science Forum 600 (1): 317–20. doi:10.4028/www.scientific.net/MSF.600-603.317.