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Bi4-xLaxTi3O12 Ferroelectric Thin Films Prepared by RF Magnetron Sputtering

Authors :
Li, Xing'ao
Liu, Zu Li
Zuo, An You
Yuan, Zuo Bin
Yang, Jian Ping
Yao, Kai Lun
Source :
Key Engineering Materials; February 2008, Vol. 368 Issue: 1 p109-111, 3p
Publication Year :
2008

Abstract

Bi4-xLaxTi3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4-xLaxTi3O12 (x=0.5, 0.75, 1) targets with 50-mm diameter and 5-mm thickness. The effects of La contents on microstructure and ferroelectric properties of Bi4-xLaxTi3O12 thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on the La contents in the BLT thin films.

Details

Language :
English
ISSN :
10139826 and 16629795
Volume :
368
Issue :
1
Database :
Supplemental Index
Journal :
Key Engineering Materials
Publication Type :
Periodical
Accession number :
ejs20060888
Full Text :
https://doi.org/10.4028/www.scientific.net/KEM.368-372.109