Resonant exciton-phonon spectra in a ZnCdSe/ZnSe single quantum well

The fine structure and intensity of resonant exciton-phonon (REP) spectra in a Zn<iopmath latex="$_{0.87}$">_0.87</iopmath>Cd<iopmath latex="$_{0.13}$">_0.13</iopmath>Se/ZnSe single quantum well (QW) have been investigated in detail at tunable laser excitation in the energy region of ground ZnCdSe exciton state at 8 K. Observed REP lines have been shown to go through two different mechanisms. The most intensive component corresponds to Raman scattering through extended exciton states. Other less intensive REP components correspond to hot luminescence of localized excitons. An analysis of optical phonon modes, which can be involved in the formation of the REP spectra in biaxially strained Zn<iopmath latex="$_{0.87}$">_0.87</iopmath>Cd<iopmath latex="$_{0.13}$">_0.13</iopmath>Se QWs, has been carried out.