Mössbauer study of119Sn defects in silicon from ion implantations of radioactive119In

Radioactive¹¹⁹In⁺ ions (T_1/2=2.1 min) obtained from the ISOLDE facility at CERN have been implanted into silicon single crystals at room temperature. Mössbauer emission spectra from the 24 keV ?-radiation of the daughter¹¹⁹Sn have been measured by fast resonance-counting technique. Five independent lines, characterized by their hyperfine parameters and Debye temperatures, have been found in the spectra. From the bonding configurations, deduced for the Sn impurity atoms, these are concluded to be located in four different defects in the silicon lattice. Simple models are proposed for the defects.