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Deformation dynamics of pore-free Ti4+-doped and pure c-axis sapphire crystals

Authors :
Michael, D. J.
Tressler, R. E.
Source :
Journal of Materials Science; November 1974, Vol. 9 Issue: 11 p1781-1788, 8p
Publication Year :
1974

Abstract

Single crystal alumina filaments undoped and Ti<superscript>4+</superscript>-doped, having the c-axis within 2° of the filament axis were plastically strained in constant strain-rate tensile experiments. The results of differential strain-rate and differential temperature tests were used to calculate the stress exponents in the strain-rate equation, the activation volumes, and the activation enthalpies. The relatively high values of the stress-exponents (6 to 7), the variations of the activation enthalpy with stress and temperature, and the magnitudes of the strain-independent activation volumes suggest overcoming the Peierls-Nabarro stress as the rate-limiting mechanism for plastic deformation of the alumina crystals. The microscopic observations of the deformed specimens are consistent with slip on the {10¯11} <¯1101> pyramidal system as reported in previous investigations of similar materials.

Details

Language :
English
ISSN :
00222461 and 15734803
Volume :
9
Issue :
11
Database :
Supplemental Index
Journal :
Journal of Materials Science
Publication Type :
Periodical
Accession number :
ejs16419539
Full Text :
https://doi.org/10.1007/BF00541746