A simple model for dry oxidation of silicon ion implanted with high doses of arsenic

Details

Language :

English

ISSN :

02618028 and 15734811

Volume :

11

Issue :

11

Database :

Supplemental Index

Journal :

Journal of Materials Science Letters

Publication Type :

Periodical

Accession number :

ejs15929552

Full Text :

https://doi.org/10.1007/BF00729482