Oxidation inhibiting properties of Si3N4-layers produced by ion implantation

Authors :: Ramin, M.
Ryssel, H.
Kranz, H.
Source :: Applied Physics A: Materials Science & Processing; August 1980, Vol. 22 Issue: 4 p393-397, 5p
Publication Year :: 1980
Abstract: Abstract: The implantation of nitrogen into silicon to produce Si<subscript>3</subscript>N<subscript>4</subscript> layers was investigated to find an alternative to CVD-Si<subscript>3</subscript>N<subscript>4</subscript> layers used in ISOPLANAR-and LOCOS-technology. The technological properties of the implanted Si<subscript>3</subscript>N<subscript>4</subscript> layers in respect to oxidation inhibition and etching are comparable or superior to CVD-Si<subscript>3</subscript>N<subscript>4</subscript> layers. The implanted layers are more resistent against oxidation for nitrogen doses of 2.410<superscript>17</superscript> cm<superscript>−2</superscript> at 30keV. The etching behavior is comparable for both types of Si<subscript>3</subscript>N<subscript>4</subscript>-layers. In the implanted layers no pinholes are found and threre is no formation of a bird's beak, as is well known in the case of CVD-nitride.