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High concentration effects of ion implanted boron in silicon
- Source :
- Applied Physics A: Materials Science & Processing; May 1980, Vol. 22 Issue: 1 p35-38, 4p
- Publication Year :
- 1980
-
Abstract
- Abstract: The diffusion behaviour of implanted boron in silicon was investigated using the<superscript>10</superscript>B(n,α)<superscript>7</superscript> Li nuclear reaction. An anomalous behavior with a strong reduction of the diffusivity above an effective solubility limit at 1.510<superscript>19</superscript>, 610<superscript>19</superscript>, and 1.110<superscript>20</superscript> cm<superscript>−3</superscript> was found for annealing temperatures of 800, 900, and 1,000C, respectively.
Details
- Language :
- English
- ISSN :
- 09478396 and 14320630
- Volume :
- 22
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Periodical
- Accession number :
- ejs15637493
- Full Text :
- https://doi.org/10.1007/BF00897929