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A comparison of the diffusion of iodine into CdTe, Hg0.8Cd0.2Te and Zn0.05Cd0.95Te

Authors :
Jones, E.
Malzbender, J.
Shaw, N.
Capper, P.
Mullin, J.
Source :
Journal of Electronic Materials; September 1995, Vol. 24 Issue: 9 p1225-1229, 5p
Publication Year :
1995

Abstract

Abstract: Studies on the diffusion of iodine into CdTe, mercury cadmium telluride (Hg<subscript>0.8</subscript>Cd<subscript>0.2</subscript>Te, referred to as MCT) and zinc cadmium telluride (Zn<subscript>0.5</subscript>Cd<subscript>0.95</subscript>Te, referred to as ZCT) in the temperature range of 20 to 600�C are compared and discussed. The concentration profiles were measured using a radiotracer sectioning technique. As with the diffusion studies using the halogens into CdTe, the profiles were composed of four parts to which a computer package consisting of the sum of four complementary error functions (erfc) gave satisfactory fits. The diffusivity for the diffusion of iodine into MCT was faster than for the diffusion into CdTe, which was faster than for the diffusion into ZCT. The high diffusivity for the fastest profile part at 20�C indicates that when iodine is diffused from the vapor into these materials, it is not a suitable long term stable dopant in devices where sharp junctions are required.

Details

Language :
English
ISSN :
03615235 and 1543186X
Volume :
24
Issue :
9
Database :
Supplemental Index
Journal :
Journal of Electronic Materials
Publication Type :
Periodical
Accession number :
ejs15447268
Full Text :
https://doi.org/10.1007/BF02653078