High-performance InGaAs/InP avalanche photodiode for a 2.5 Gb s-1 optical receiver

Authors :: Park, C. Y.
Hyun, K. S.
Kang, S. K.
Song, M. K.
Yoon, T. Y.
Kim, H. M.
Park, H. M.
Park, S. -C.
Lee, Y. H.
Lee, C.
Yoo, J. B
Source :: Optical and Quantum Electronics; May 1995, Vol. 27 Issue: 5 p553-559, 7p
Publication Year :: 1995
Abstract: High-speed mesa type SAGCM avalanche photodiodes for 2.5 Gb s<superscript>-1</superscript> optical receivers have been realized for the first time. The device is designed by dimensional analysis based on the electric field distribution in a multiplication layer and a charge plate layer. Very low dark current and high gain are obtained with an active region of 30 µm diameter. From the 1.55 µm wavelength 2.488 Gb s<superscript>-1</superscript> transmission experiment, sensitivity of-33.6 dBm is measured using pseudorandom (2<superscript>23</superscript>–1) NRZ patterns.

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