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Design, fabrication and characterization of high-speed asymmetric Fabry-Perot modulators for optical interconnect applications

Authors :
Barron, C. C.
Mahon, C. J.
Thibeault, B. J.
Coldren, L. A.
Source :
Optical and Quantum Electronics; December 1993, Vol. 25 Issue: 12 pS885-S898, 14p
Publication Year :
1993

Abstract

Free-space ‘smart-pixel’ optical interconnect architectures promise to relieve the interconnect ‘bottleneck’ in high-speed parallel computers and switching systems. One of the most promising output devices that has been advanced for use in these systems is the asymmetric Fabry-Perot modulator, or AFPM, which offers high on-off contrast, low insertion loss, and low operating voltage swing, among other advantages. In this paper we summarize our work on optimizing the AFPM for high-speed operation, including analysis of the material structure design considerations, fabrication of small (16×20 µm) devices, and high-speed electrical and optical characterization of the finished modulators. We conclude that at relatively high incident optical intensities the modulators' speed appears to be limited by transit effects to about 18 GHz, but that at lower optical intensities their frequency response outstrips that of our 20 GHz measurement apparatus — that is, these AFPMs are still capable of large signal modulation (20 dB contrast, 1.5 dB insertion loss) at low AC voltage swings (±3 V) for operating frequencies up to 20 GHz. We presume that further investigation will prove them to be RC-limited in this low-intensity regime to speeds of about 35 GHz.

Details

Language :
English
ISSN :
03068919 and 1572817X
Volume :
25
Issue :
12
Database :
Supplemental Index
Journal :
Optical and Quantum Electronics
Publication Type :
Periodical
Accession number :
ejs15276876
Full Text :
https://doi.org/10.1007/BF00430332