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Photoluminescence under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN
- Source :
- Physica Status Solidi (A) - Applications and Materials Science; January 2008, Vol. 205 Issue: 1 p107-113, 7p
- Publication Year :
- 2008
-
Abstract
- The puzzling electronic properties of GaAsN have been investigated through the compositional dependence of two highly sensitive band structure parameters: the electron effective mass, me, and the electron gyromagnetic factor, ge. In the N concentration range from 0% to 0.7%, both me and ge show a highly nonlinear dependence on N composition that can be explained in terms of alternating on- and off-resonance conditions between the red-shifting conduction band edge and specific energy-pinned N cluster states. Furthermore, the electronic properties of the material are studied under hydrostatic pressure, P. This allows tuning in a same sample the interaction between extended and localized states and disclosing a hierarchy between different nitrogen complexes as regards the extent of the perturbation these complexes exert on the electronic properties of the GaAs host crystal. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Details
- Language :
- English
- ISSN :
- 18626300 and 18626319
- Volume :
- 205
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Physica Status Solidi (A) - Applications and Materials Science
- Publication Type :
- Periodical
- Accession number :
- ejs13644900
- Full Text :
- https://doi.org/10.1002/pssa.200777462