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Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1−xGex MOSFETs
- Source :
- Solid State Electronics; 1999, Vol. 43 Issue: 12 p2173-2173, 1p
- Publication Year :
- 1999
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 43
- Issue :
- 12
- Database :
- Supplemental Index
- Journal :
- Solid State Electronics
- Publication Type :
- Periodical
- Accession number :
- ejs12405115
- Full Text :
- https://doi.org/10.1016/S0038-1101(99)00185-9