Back to Search Start Over

Chemical etching of thin film PLZT

Authors :
Mancha, S.
Source :
Ferroelectrics; October 1992, Vol. 135 Issue: 1 p131-137, 7p
Publication Year :
1992

Abstract

A technique to chemically etch thin film PLZT has been developed. Micrometer geometries with straight walls have been produced in 0.7 μm thick films. The photolithography procedure was typical of semiconductor type processes. The etching procedure was to agitate the wafers in a solution of one part BOE, two parts HCl, and three parts water, then to dip them in HNO3 diluted 50 %. The etch rate was approximately 0.01 μm/sec. Partial etching is not possible, because the stoichiometry is not maintained during the etch and the surface figure is distorted.

Details

Language :
English
ISSN :
00150193
Volume :
135
Issue :
1
Database :
Supplemental Index
Journal :
Ferroelectrics
Publication Type :
Periodical
Accession number :
ejs12241733
Full Text :
https://doi.org/10.1080/00150199208230018