The effects of film thickness of ortho-nitrobenzaldehyde modified PZT on the crystallization and ferroelectric properties

Self-patterned PZT films on Pt/Ti/SiO2/Si substrate with different behavior of shrinkage were obtained by varying the molar concentrations of stock solution. PZT film showing a minimum shrinkage was prepared with 0.6M-PZT stock solution. The physical and electrical properties of self-patterned PZT film with 120 nm thick were compared with the film with 240 nm thick. Both self-patterned PZT films showed good properties regardless of the film thickness. With 120 nm thick self patterned PZT film, microstructure with fine grains and (111) preferred orientation were more important. Remnant polarization was relatively lower than 240 nm thick film due to the small film thickness.