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Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications
- Source :
- Electronics Letters; May 1995, Vol. 31 Issue: 11 p925-927, 3p
- Publication Year :
- 1995
-
Abstract
- A new approach to reducing the source resistance in InP-based InAlAs/InGaAs enhancement-mode HEMTs is developed using Pt-based buried-gate technology. Source resistance as small as 0.2 Ωmm is obtained, which results in an excellent transconductance of 1170 mS/mm for a 0.5 µm long gate enhancement-mode HEMT.
Details
- Language :
- English
- ISSN :
- 00135194 and 1350911X
- Volume :
- 31
- Issue :
- 11
- Database :
- Supplemental Index
- Journal :
- Electronics Letters
- Publication Type :
- Periodical
- Accession number :
- ejs11977673