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Transistor effect in monolithic Si/CoSi2/Si epitaxial structures
- Source :
- Electronics Letters; September 1984, Vol. 20 Issue: 19 p762-764, 3p
- Publication Year :
- 1984
-
Abstract
- Epitaxial Si 〈111〉/CoSi2/Si structures have been grown by molecular beam epitaxy. The transistor effect, via ballistic electron transport in the CoSi2 200 A˚-thick base, has been observed. The ballistic mean free path in CoSi2 obtained (λB ˜ 105 A˚) from the current gain is consistent within 20% with the predicted value (λBth ˜ 80 A˚).
Details
- Language :
- English
- ISSN :
- 00135194 and 1350911X
- Volume :
- 20
- Issue :
- 19
- Database :
- Supplemental Index
- Journal :
- Electronics Letters
- Publication Type :
- Periodical
- Accession number :
- ejs11970503