New v-groove integrated injection logic

A new V-groove integrated injection logic (v.i.i.l.) is proposed which combines the V-groove technology and the double-diffused bipolar technology. The fabrication processes arc qualitatively described. The lateral p–n–p transistor of the i.i.l. is located on the vertical V-shape surface, and the effective base width is controlled by the combination of the vertical diffusion process and the V-groove etching rate. A 1-dimensional analysis is used and an approximate expression for the collector current of the lateral p–n–p transistor is given. The v.i.i.l. is expected to have a higher production yield than that of the ordinary i.i.l.