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Au/AuBe/Cr contact to p-ZnTe

Authors :
Chang, S.J.
Chen, W.R.
Su, Y.K.
Chen, J.F.
Lan, W.H.
Chiang, C.I.
Lin, W.J.
Cherng, Y.T.
Liu, C.H.
Source :
Electronics Letters; March 2001, Vol. 37 Issue: 5 p321-322, 2p
Publication Year :
2001

Abstract

Au/AuBe and Au/AuBe/Cr contacts have been deposited onto the surface of p-ZnTe. It was found that with a proper choice of Cr thickness, a low specific contact resistance of 2.0 × 10-6 Ωcm2 can be achieved for Au/AuBe/Cr on p-ZnTe. It was also found that Zn outdiffusion will significantly degrade the electrical properties of the Au/AuBe contact on p-ZnTe when annealing temperature is above 300°C. Conversely, Au/AuBe/Cr contact is more thermally reliable. Such a property makes Au/AuBe/Cr attractive in device application.

Details

Language :
English
ISSN :
00135194 and 1350911X
Volume :
37
Issue :
5
Database :
Supplemental Index
Journal :
Electronics Letters
Publication Type :
Periodical
Accession number :
ejs11959711

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