Highly doped implanted donor layers in laser annealed gallium arsenide

Details

Language :

English

ISSN :

10420150 and 10294953

Volume :

47

Issue :

1

Database :

Supplemental Index

Journal :

Radiation Effects and Defects in Solids

Publication Type :

Periodical

Accession number :

ejs11807576

Full Text :

https://doi.org/10.1080/00337578008209191