Cite
Deep electron level calculations for dislocations in Si and Ge recursion approach exploiting the translational symmetry
MLA
Veth, H., and H. Teichler. “Deep Electron Level Calculations for Dislocations in Si and Ge Recursion Approach Exploiting the Translational Symmetry.” Philosophical Magazine B, vol. 49, no. 4, Apr. 1984, pp. 371–84. EBSCOhost, https://doi.org/10.1080/13642818408246525.
APA
Veth, H., & Teichler, H. (1984). Deep electron level calculations for dislocations in Si and Ge recursion approach exploiting the translational symmetry. Philosophical Magazine B, 49(4), 371–384. https://doi.org/10.1080/13642818408246525
Chicago
Veth, H., and H. Teichler. 1984. “Deep Electron Level Calculations for Dislocations in Si and Ge Recursion Approach Exploiting the Translational Symmetry.” Philosophical Magazine B 49 (4): 371–84. doi:10.1080/13642818408246525.