Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique

MLA

Kaniewska, M., et al. “Characterization of Deep Levels at GaAs/GaAs and GaAs/InAs Interfaces Grown by MBE-Interrupted Growth Technique.” Physica Status Solidi (A) - Applications and Materials Science, vol. 204, no. 4, Apr. 2007, pp. 987–91. EBSCOhost, https://doi.org/10.1002/pssa.200674158.

APA

Kaniewska, M., Engström, O., Pacholak-Cybulska, M., & Sadeghi, M. (2007). Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique. Physica Status Solidi (A) - Applications and Materials Science, 204(4), 987–991. https://doi.org/10.1002/pssa.200674158

Chicago

Kaniewska, M., O. Engström, M. Pacholak-Cybulska, and M. Sadeghi. 2007. “Characterization of Deep Levels at GaAs/GaAs and GaAs/InAs Interfaces Grown by MBE-Interrupted Growth Technique.” Physica Status Solidi (A) - Applications and Materials Science 204 (4): 987–91. doi:10.1002/pssa.200674158.