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Hydrostatic pressure investigations of resonant tunnelling through X-minimum-related states in a single barrier GaAs/AlAs/GaAs heterostructure

Authors :
Gryglas, M.
Przybytek, J.
Baj, M.
Henini, M.
Eaves, L. S.
Source :
High Pressure Research; September 2000, Vol. 18 Issue: 1 p63-67, 5p
Publication Year :
2000

Abstract

We have investigated the resonant tunnelling of electrons through X-valley related states in a single AlAs barrier with Si donor & doping. Under high hydrostatic pressure all the peaks observed in the differential conductance-voltage (σ-V) characteristics shift with a pressure rate of -lSmeV/kbar, which is expected for X-minima related electronic states.

Details

Language :
English
ISSN :
08957959 and 14772299
Volume :
18
Issue :
1
Database :
Supplemental Index
Journal :
High Pressure Research
Publication Type :
Periodical
Accession number :
ejs11338704
Full Text :
https://doi.org/10.1080/08957950008200949