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Hydrostatic pressure investigations of resonant tunnelling through X-minimum-related states in a single barrier GaAs/AlAs/GaAs heterostructure
- Source :
- High Pressure Research; September 2000, Vol. 18 Issue: 1 p63-67, 5p
- Publication Year :
- 2000
-
Abstract
- We have investigated the resonant tunnelling of electrons through X-valley related states in a single AlAs barrier with Si donor & doping. Under high hydrostatic pressure all the peaks observed in the differential conductance-voltage (σ-V) characteristics shift with a pressure rate of -lSmeV/kbar, which is expected for X-minima related electronic states.
Details
- Language :
- English
- ISSN :
- 08957959 and 14772299
- Volume :
- 18
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- High Pressure Research
- Publication Type :
- Periodical
- Accession number :
- ejs11338704
- Full Text :
- https://doi.org/10.1080/08957950008200949