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Mn and Sb doped-PZT thin films for uncooled infrared detector array
- Source :
- Integrated Ferroelectrics; September 1999, Vol. 25 Issue: 1-4 p21-30, 10p
- Publication Year :
- 1999
-
Abstract
- AbstractMn and Sb doped-PZT (PMSZT) pyroelectric thin films have been fabricated on Si substrates for uncooled infrared detectors and thermal imaging heads. The electric properties of PMSZT thin films have been investigated. A pyroelectric coefficient p of 45 nC/cm2K, dielectric constant εrof 100, and dielectric loss tanδ of 0.01 at 25°C for the PMSZT thin films have been achieved. The PMSZT detectors exhibited high figures of merit Fvof 1768 cm2/C, and Fdof 0.048 cm3/J½at 25°C. An IR detector array with the PMSZT thin film deposited on a YBCO microbridge structure for thermal isolation has been fabricated using micromachining techniques. The PMSZT detector with an air gap between the bottom electrode and Si substrates shows a larger voltage response than that of PMSZT detector without an air gap. At a 30 Hz frame frequency, a 3 times larger voltage response of a PMSZT detector with air gap, compared to that without an air gap, has been achieved. The PMSZT detectors with the relatively flat detectivity D*, ranging from 2.5×108to 6.0×108cmHz½/W in the 2.5–19.5 μm wavelength band indicate a potential for broad band IR detectors.
Details
- Language :
- English
- ISSN :
- 10584587 and 16078489
- Volume :
- 25
- Issue :
- 1-4
- Database :
- Supplemental Index
- Journal :
- Integrated Ferroelectrics
- Publication Type :
- Periodical
- Accession number :
- ejs11324582
- Full Text :
- https://doi.org/10.1080/10584589908210156