Influence of Excitation Frequency and Amplitude on the Switching Properties of SBT and PZT Thin Films at 10 MHZ Hysteresis Frequency

For development and optimization of high density ferroelectric random access memory (FeRAM) devices, it is highly important to understand the polarization switching process. As demands on measurement hardware for these nonlinear devices rise with falling cycle time, the development of faster measurement equipment is desired for observation. We report on the direct investigation of the switching behaviour near device operation frequency of chemical solution deposition (CSD) prepared thin films of perovskite materials such as strontium bismuth tantalate SrBi 2 Ta 2 O 9 (SBT) and lead zirconate titanate Pb(Zr 0.3 ,T 0.7 )O 3 (PZT) with a newly developed measurement setup. In this work, high speed dynamic hysteresis measurements are performed to further explore the dynamic behaviour of polarization switching into the frequency domain. Virtual Ground measurements down to 100 ns cycle time of excitation signal were achieved, providing additional insight into device operation. A rise of Vc with a factor of 0.065 kV/decade between measurements at 10 Hz and 10 MHz of excitation frequency was confirmed.