Design of a recessed-gate GaN-based MOSFET using a dual gate dielectric for high-power applications.

Details

Language :

English

ISSN :

03744884

Volume :

65

Issue :

10

Database :

Supplemental Index

Journal :

Journal of the Korean Physical Society

Publication Type :

Academic Journal

Accession number :

99840496

Full Text :

https://doi.org/10.3938/jkps.65.1579