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Picosecond Ultrasonics Provides CoSi Characterization.
- Source :
- Semiconductor International; Feb2003, Vol. 26 Issue 2, p70, 4p, 5 Graphs
- Publication Year :
- 2003
-
Abstract
- Discusses various aspects of cobalt silicide, which is made use of in metal oxide semiconductors. Factors to be considered during processing of cobalt silicide films; Effect of anneal temperature on the sheet resistance of cobalt silicide; Utility of picosecond ultrasonic technology in monitoring the production process of cobalt silicide.
- Subjects :
- COBALT compounds
SILICIDES
METAL oxide semiconductors
Subjects
Details
- Language :
- English
- ISSN :
- 01633767
- Volume :
- 26
- Issue :
- 2
- Database :
- Supplemental Index
- Journal :
- Semiconductor International
- Publication Type :
- Periodical
- Accession number :
- 9036128