Design of Low Noise Distributed Amplifier with Adjustable Gain Control in 0.15um GaAs PHEMT.

Abstract: In this paper, a distributed amplifier with adjustable gain control is designed based on 0.15um GaAs PHEMT which consists of nine gain cells, and the novel cascode structure is adopted to extend the output voltage and bandwidth. The amplifier provides 16dB high gain with only 2.5dB noise figure in a wide band from 2 to 24GHz and the gain flatness is excellent±0.2dB from 3.5-23.5GHz. An optional gate bias is specially designed to allow greater than 10dB gain control range. The circuit requires only 60mA from a+5V supply and the area is 2.36*1.01mm2. [Copyright &y& Elsevier]