Effects of N2O Postdeposition Annealing on Metal-Organic Decomposed CeO2 Gate Oxide Spin-Coated on GaN Substrate.

MLA

Quah, H. J., et al. “Effects of N2O Postdeposition Annealing on Metal-Organic Decomposed CeO2 Gate Oxide Spin-Coated on GaN Substrate.” Journal of The Electrochemical Society, vol. 158, no. 4, Apr. 2011, pp. H423–32. EBSCOhost, https://doi.org/10.1149/1.3548542.

APA

Quah, H. J., Cheong, K. Y., Hassan, Z., & Lockman, Z. (2011). Effects of N2O Postdeposition Annealing on Metal-Organic Decomposed CeO2 Gate Oxide Spin-Coated on GaN Substrate. Journal of The Electrochemical Society, 158(4), H423–H432. https://doi.org/10.1149/1.3548542

Chicago

Quah, H. J., K. Y. Cheong, Z. Hassan, and Z. Lockman. 2011. “Effects of N2O Postdeposition Annealing on Metal-Organic Decomposed CeO2 Gate Oxide Spin-Coated on GaN Substrate.” Journal of The Electrochemical Society 158 (4): H423–32. doi:10.1149/1.3548542.