Thallium Chalcogenide-Based Wide-Band-Gap Semiconductors: TlGaSe2for Radiation Detectors.

MLA

Simon Johnsen, et al. “Thallium Chalcogenide-Based Wide-Band-Gap Semiconductors: TlGaSe2for Radiation Detectors.” Chemistry of Materials, vol. 23, no. 12, June 2011, pp. 3120–28. EBSCOhost, https://doi.org/10.1021/cm200946y.

APA

Simon Johnsen, Zhifu Liu, John A. Peters, Jung-Hwan Song, Sebastian C. Peter, Christos D. Malliakas, Nam Ki Cho, Hosub Jin, Arthur J. Freeman, Bruce W. Wessels, & Mercouri G. Kanatzidis. (2011). Thallium Chalcogenide-Based Wide-Band-Gap Semiconductors: TlGaSe2for Radiation Detectors. Chemistry of Materials, 23(12), 3120–3128. https://doi.org/10.1021/cm200946y

Chicago

Simon Johnsen, Zhifu Liu, John A. Peters, Jung-Hwan Song, Sebastian C. Peter, Christos D. Malliakas, Nam Ki Cho, et al. 2011. “Thallium Chalcogenide-Based Wide-Band-Gap Semiconductors: TlGaSe2for Radiation Detectors.” Chemistry of Materials 23 (12): 3120–28. doi:10.1021/cm200946y.